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Proceedings Paper

Inorganic polymer resists for EUVL
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Paper Abstract

The uniqueness in extreme ultraviolet (EUV) Lithography is encouraging the development of new polymer platform as a resist material. The absorbance characteristic of materials at the EUV region demands the use of polymers containing highly transparent silicon atoms. Also very low level of outgassing is required due to the vacuum environment during exposure and the extremely high cost of the EUV tools. To fulfill those requirements, two types of silicon backbone polymers were studied; chemically amplifiable polysilanes and polysilsesquiazanes. In the former case, the direct incorporation of acid sensitive groups into the polymer backbone allows for a solubility switch upon exposure. In the later system, this nitrogen-containing silicon polymer can be cleaved upon exposure to induce a solubility switch. These polymers possess many essential properties including low absorbance, low outgassing, and high sensitivity. Polymers having different substituents and branching ratios were synthesized. The properties of the polymers will be discussed relating to their lithographic performances.

Paper Details

Date Published: 4 May 2005
PDF: 6 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.600172
Show Author Affiliations
Juan Pablo Bravo-Vasquez, Cornell Univ. (United States)
Young-Je Kwark, Cornell Univ. (United States)
Christopher Kemper Ober, Cornell Univ. (United States)
Heidi B. Cao, Intel Corp. (United States)
Hai Deng, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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