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Proceedings Paper

Utilizing overlay target noise metrics for improved process control
Author(s): Sean Hannon; John C. Robinson; Marcelo Cusacovich; Chris Nelson; Harold Kennemer
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Paper Abstract

A method has been developed for calculating the statistical effects of spatial noise on the overlay measurement extracted from a given overlay target. Previously, this metric has been shown to correlate well to the random component of Overlay Mark Fidelity (OMF), and that OMF is a significant contributor to the noise hierarchy. Quantitative diagnostic methods are required in order to assess the capabilities of overlay metrology and provide visibility into root-causes of potential inaccuracies intrinsic in the processing of overlay targets. We explore the use of this target noise metric for improved process control including improved overlay modeling, process fault detection, and process troubleshooting. In this paper we demonstrate the use of this additional metric for multiple layers in a large volume of production data utilizing existing production sampling.

Paper Details

Date Published: 10 May 2005
PDF: 7 pages
Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); doi: 10.1117/12.600153
Show Author Affiliations
Sean Hannon, Spansion LLC (United States)
John C. Robinson, KLA-Tencor Corp. (United States)
Marcelo Cusacovich, KLA-Tencor Corp. (United States)
Chris Nelson, KLA-Tencor Corp. (United States)
Harold Kennemer, Spansion LLC (United States)

Published in SPIE Proceedings Vol. 5752:
Metrology, Inspection, and Process Control for Microlithography XIX
Richard M. Silver, Editor(s)

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