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Proceedings Paper

A simulation performance framework using in situ metrology
Author(s): Joseph J. Bendik; Yuji Yamaguchi; Lyle G. Finkner; Adlai H. Smith
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Paper Abstract

Modern lithographic simulation engines1 are quite capable of determining the detrimental impact of source and lens aberrations on low k1 lithographic metrics - given the proper input2. Circuit designers, lithographic engineers, and manufacturing facilities would seem to be the beneficiaries of the predictive power of lithographic simulators; however, in-situ methods for accurately determining lens aberrations and source metrology maps have only rather recently been accepted3 and integrated into practice4. For this work, we introduce several new methods for characterizing scanner performance including a high accuracy source metrology tool and integrated simulation engine5. We focus attention on the combined detrimental effects of lens aberrations, source non-ideality, distortion, synchronization error, and transmission error on deep sub-wavelength lithographic metrics such as: H-V bias, feature-shift, and ΔCD. After a brief theoretical discussion, we describe a matrix of simulation case studies and present results. Finally, we discuss potential applications for the simulation performance framework and its potential impact to industry.

Paper Details

Date Published: 12 May 2004
PDF: 12 pages
Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.600135
Show Author Affiliations
Joseph J. Bendik, Litel Instruments (United States)
Yuji Yamaguchi, Litel Instruments (United States)
Lyle G. Finkner, Intel Corp. (United States)
Adlai H. Smith, Litel Instruments (United States)


Published in SPIE Proceedings Vol. 5754:
Optical Microlithography XVIII
Bruce W. Smith, Editor(s)

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