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Proceedings Paper

Critical dimension uniformity control with combined ellipsometry and reflectometry
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Paper Abstract

In the 90nm node and beyond, Critical Dimension Uniformity (CDU) control is essential for today's high performance IC devices. The desired control of CDU is just under 2nm (3 sigma) across a 300mm wafer with 577 die. In this study we used an Opti-Probe 7341 RT/CD system that combines broadband (190-840 nm) spectroscopic ellipsometry (SE), spectroscopic reflectometry (BB), single wavelength (673 nm) beam profile reflectometry (BPR) and single wavelength (633nm) absolute ellipsometry (AE). All of the above technologies were used to characterize the optical dispersions of the individual films in the stack of interest, resist/barc/sion/poly/oxide/silicon. We then used these dispersion results and the SE and BB technologies to characterize the CDU of the patterned wafer. With the SE technology we measured CDU's in the range of 1.9-2.0 nm compared with BB measured CDU's in the range of 4-5 nm, both SE and BB wavelength were in the range of 240 nm-780 nm. However, if the wavelength range of SE and BB were extended to 190nm-840 nm, the CDU with SE stayed at the same level while that of BB reduced a factor of 2 to about 2.0-2.5 nm.

Paper Details

Date Published: 10 May 2005
PDF: 15 pages
Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); doi: 10.1117/12.600124
Show Author Affiliations
Jon Opsal, Therma-Wave, Inc. (United States)
Jingmin Leng, Therma-Wave, Inc. (United States)
Xuelong Cao, Therma-Wave, Inc. (United States)

Published in SPIE Proceedings Vol. 5752:
Metrology, Inspection, and Process Control for Microlithography XIX
Richard M. Silver, Editor(s)

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