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Proceedings Paper

Pattern collapse and line width roughness reduction by surface conditioner solutions for 248-nm lithography
Author(s): Peng Zhang; Madhukar B. Rao; Manuel Jaramillo; Bridget Horvath; Brenda Ross; Ted Paxton; Todd Davis; Pat Cook; David Witko
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Paper Abstract

In this paper, surface conditioners were applied during the post-develop process to extend the capability of 248nm lithography processing below the k1= 0.30 threshold. The interaction between surface conditioner and photoresist was found to be a critical parameter in affecting pattern collapse, line width roughness (LWR), and process latitude. Tailoring the surface interaction properties required balancing between surface conditioners that had weak interactions that improved pattern collapse only marginally, to surface conditions with strong interactions that produced a considerable reduction in LWR but provided no benefit to pattern collapse or process latitude when compared to DI water. The surface conditioners with optimized resist interactions provided significant improvement in all performance parameters including reduced pattern collapse, improved LWR, and enlarged usable process latitude.

Paper Details

Date Published: 4 May 2005
PDF: 9 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.600066
Show Author Affiliations
Peng Zhang, Air Products and Chemicals, Inc. (United States)
Madhukar B. Rao, Air Products and Chemicals, Inc. (United States)
Manuel Jaramillo, Air Products and Chemicals, Inc. (United States)
Bridget Horvath, Air Products and Chemicals, Inc. (United States)
Brenda Ross, Air Products and Chemicals, Inc. (United States)
Ted Paxton, ASML (United States)
Todd Davis, ASML (United States)
Pat Cook, ASML (United States)
David Witko, ASML (United States)


Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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