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Proceedings Paper

An integrated imaging system for the 45-nm technology node contact holes using polarized OAI, immersion, weak PSM, and negative resists
Author(s): John S. Petersen; Mark J. Maslow; Robert T. Greenway
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Paper Abstract

Imaging contact holes has become a major technology barrier for optical lithography in the deep sub-wavelength era. Using hyper-numerical aperture, extreme off-axis illumination with TE-polarization, weak PSM and negative-acting resists 50nm contacts on a 90nm pitch can be produced with better than 0.3 micron depth-of-focus with 5% exposure latitude and maximum exposure latitude of greater than 15% at best focus. Large depth-of-focus across-pitch range solutions for 50nm contacts require the use of multiple exposures using unique sources but smaller focus budgets can be reduced to single exposure. This work defines possible integrated imaging systems that will allow imaging of deep sub-wavelength sized contact holes and then compares these to other solutions that have been proposed in the literature. Specifically, source design through normalized-image-log-slope, normalized-resist-image-log-slope and process window mapping, development of contact hole primitives using full mask transform correction (where the mask pattern shape, material and topography are taken into account) and resist requirements will be discussed for developing dense, mid-range and isolated pitch contact hole imaging solutions for the 45nm technology node.

Paper Details

Date Published: 12 May 2004
PDF: 10 pages
Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.600010
Show Author Affiliations
John S. Petersen, Petersen Advanced Lithography, Inc. (United States)
Mark J. Maslow, Petersen Advanced Lithography, Inc. (United States)
Robert T. Greenway, Petersen Advanced Lithography, Inc. (United States)


Published in SPIE Proceedings Vol. 5754:
Optical Microlithography XVIII
Bruce W. Smith, Editor(s)

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