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Proceedings Paper

Design rule considerations for 65-nm node contact using off axis illumination
Author(s): Scott Jessen; Mark Mason; Sean O'Brien; Mark Terry; Robert Soper; Thomas Wolf
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Paper Abstract

Perhaps the most critical lithographic challenge at teh 65 nm node can be found printing contact holes for random logic. Achieving all pitches from dense to isolated simultaneously in a single mask print requires high numerical aperture (NA) with novel low-k1 imaging techniques. As is typical in complex engineering problems, requirements compete against each other. The requirement to achieve the desired dense resolution suggests the use of off axis illumination (OAI) techniques such annular and Quasar. At the same time, the need to meet other figures of merit (FOM) such as depth of focus (DOF) and mask error enhancement factor (MEEF) for larger pitches are strong considerations for choosing the more conventional illumination conditions. Moreover, previously unconsidered FOMs such as contact asymmetry and displacement must now also be strongly considered. In particular, we discuss design limitations which may be incorporated to avoid fundamental patterning issues when using OAI and sub-resolution assist features (SRAF) for printing CT level at 65 nm node.

Paper Details

Date Published: 5 May 2005
PDF: 11 pages
Proc. SPIE 5756, Design and Process Integration for Microelectronic Manufacturing III, (5 May 2005); doi: 10.1117/12.600005
Show Author Affiliations
Scott Jessen, Texas Instruments Inc. (United States)
Mark Mason, Texas Instruments Inc. (United States)
Sean O'Brien, Texas Instruments Inc. (United States)
Mark Terry, Texas Instruments Inc. (United States)
Robert Soper, Texas Instruments Inc. (United States)
Thomas Wolf, Texas Instruments Inc. (United States)

Published in SPIE Proceedings Vol. 5756:
Design and Process Integration for Microelectronic Manufacturing III
Lars W. Liebmann, Editor(s)

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