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Proceedings Paper

High-resolution residual layer thickness metrology using x-ray reflectivity
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Paper Abstract

Controlling the thickness and uniformity of the unpatterned, residual layer is a critical challenge to sub-50 nm patterning with nanoimprint lithography (NIL). While nanometer level uniformity is essential, there is currently a lack of metrological capability for residual layer characterization. Specular X-ray reflectivity (SXR) is a versatile and widely used metrology to quantify the thickness, density, and roughness of thin smooth films. Here we extend specular X-ray reflectivity (SXR) to measure the thickness of the residual layer with sub-nm resolution. In addition to the residual layer thickness, X-ray reflectivity also reveals detailed information about the pattern height, the line to space ratio, and the relative line width variations of the pattern as a function of the pattern height.

Paper Details

Date Published: 6 May 2005
PDF: 8 pages
Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); doi: 10.1117/12.600004
Show Author Affiliations
Hae-Jeong Lee, National Institute of Standards and Technology (United States)
Christopher L. Soles, National Institute of Standards and Technology (United States)
Hyun Wook Ro, National Institute of Standards and Technology (United States)
Daniel R. Hines, Univ. of Maryland/College Park (United States)
Ronald L. Jones, National Institute of Standards and Technology (United States)
Eric K. Lin, National Institute of Standards and Technology (United States)
Wen-li Wu, National Institute of Standards and Technology (United States)


Published in SPIE Proceedings Vol. 5751:
Emerging Lithographic Technologies IX
R. Scott Mackay, Editor(s)

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