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Proceedings Paper

Oxide etch rate estimation using plasma impedance monitoring
Author(s): Daniel Tsunami; James McNames; Bruce Whitefield; Paul Rudolph; Jeff Zola
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Paper Abstract

The oxide etch rate of a single chamber of plasma etch tool is estimated from plasma impedance data collected during the etch process. The etch rate is estimated using a linear statistical model and etch rate measurements performed on special test wafers. Stepwise regression is used to select possible predictors from a large pool of summary statistics calculated from the plasma impedance waveforms. The relationship of the estimated mean etch rate to yield and potential yield optimization is explored. An example application of an advanced process controller to optimize the yield of the wafers processed by the etch tool in the presence of varying chamber conditions is also presented.

Paper Details

Date Published: 17 May 2005
PDF: 10 pages
Proc. SPIE 5755, Data Analysis and Modeling for Process Control II, (17 May 2005); doi: 10.1117/12.599997
Show Author Affiliations
Daniel Tsunami, Portland State Univ. (United States)
James McNames, Portland State Univ. (United States)
Bruce Whitefield, LSI Logic Corp. (United States)
Paul Rudolph, LSI Logic Corp. (United States)
Jeff Zola, LSI Logic Corp. (United States)


Published in SPIE Proceedings Vol. 5755:
Data Analysis and Modeling for Process Control II
Iraj Emami, Editor(s)

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