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Proceedings Paper

Improving lithography CD control by correcting proximity and long range variations in electron beam mask writer
Author(s): Eui-Sang Park; Hyun-Joon Cho; Jin-Min Kim; Sang-Soo Choi
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Paper Abstract

In this paper, an Energy Intensity Distribution (EID) model considering dose latitude for Variable Shaped Beam (VSB) has been developed. η values (i.e. back-scattering ratio) versus dose and process threshold have been investigated by using the EID model. Additionally, a new procedure to find optimum PEC values (η) taking into account of the process threshold is proposed through simulation. For fogging effect correction, we have adopted a Gauss model and created a new simulation algorithm to find the most suitable parameters regarding η value, process threshold, dose and the EID model.

Paper Details

Date Published: 12 May 2005
PDF: 8 pages
Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); doi: 10.1117/12.599855
Show Author Affiliations
Eui-Sang Park, PKL (South Korea)
Hyun-Joon Cho, PKL (South Korea)
Jin-Min Kim, PKL (South Korea)
Sang-Soo Choi, PKL (South Korea)


Published in SPIE Proceedings Vol. 5754:
Optical Microlithography XVIII
Bruce W. Smith, Editor(s)

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