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Proceedings Paper

193nm single layer photoresists: defeating tradeoffs with a new class of fluoropolymers
Author(s): Pushkara Rao Varanasi; Ranee W. Kwong; Mahmoud Khojasteh; Kaushal Patel; Kuang-Jung Chen; Wenjie Li; M. C. Lawson; Robert D. Allen; Ratnam Sooriyakumaran; P. Brock; Linda K. Sundberg; Mark Slezak; Gary Dabbagh; Z. Liu; Yukio Nishimura; Takashi Chiba; Tsutomu Shimokawa
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Paper Abstract

The focus of this paper is to utilize the acidity of hexafluoroalcohol (HFA) in addressing performance deficiencies associated with current 193nm methacrylate resist materials. In this study, we have designed and developed a variety of HFA pendant methacrylate monomers and the corresponding imaging polymers for ArF lithography. It was shown that typical swelling behavior observed in methacrylate resists can be substantially reduced or eliminated by replacing commonly used multicylcic lactone polar functionalities with acidic HFA side chains. The incorporation of aliphatic spacers between HFA and polymer backbone were found to be more effective than cyclic hindered moieties, in achieving linear dissolution characteristics. The typical poor etch stability associated with fluorine atoms in HFA can be substantially minimized by designing side chains with a combination of appropriate cyclic and aliphatic moieties and fine-tuning the corresponding polymer compositions. PEB sensitivity of high activation energy protecting group (e.g., methyladamentyl group) based methacrylate resists can be substantially improved through the incorporation of acidic HFA side chains (6nm/C to <1 nm/C). The key application space for HFA-methacrylate resists appears to be trench level lithography. It was also demonstrated that these HFA materials are compatible with immersion lithography and result in dramatically improved process windows for iso trench features, in addition to other lines/space features.

Paper Details

Date Published: 4 May 2005
PDF: 9 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.599700
Show Author Affiliations
Pushkara Rao Varanasi, IBM Semiconductor Research and Develpment Ctr. (United States)
Ranee W. Kwong, IBM Semiconductor Research and Develpment Ctr. (United States)
Mahmoud Khojasteh, IBM Semiconductor Research and Develpment Ctr. (United States)
Kaushal Patel, IBM Semiconductor Research and Develpment Ctr. (United States)
Kuang-Jung Chen, IBM Semiconductor Research and Develpment Ctr. (United States)
Wenjie Li, IBM Semiconductor Research and Develpment Ctr. (United States)
M. C. Lawson, IBM Semiconductor Research and Develpment Ctr. (United States)
Robert D. Allen, IBM Almaden Research Ctr. (United States)
Ratnam Sooriyakumaran, IBM Almaden Research Ctr. (United States)
P. Brock, IBM Almaden Research Ctr. (United States)
Linda K. Sundberg, IBM Almaden Research Ctr. (United States)
Mark Slezak, JSR Micro, Inc. (United States)
Gary Dabbagh, JSR Micro, Inc. (United States)
Z. Liu, JSR Micro, Inc. (United States)
Yukio Nishimura, JSR Corp. (Japan)
Takashi Chiba, JSR Corp. (Japan)
Tsutomu Shimokawa, JSR Corp. (Japan)


Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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