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Proceedings Paper

Bilayer resists based on polyhedral oligomeric silsesquioxane for 193-nm lithography
Author(s): Ramakrishnan Ganesan; Jae-Hak Choi; Hyo-Jin Yun; Young-Gil Kwon; Kyoung-Seon Kim; Tae-Hwan Oh; Jin-Baek Kim
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Paper Abstract

A novel nanomolecular resist based on POSS substituted with diazodiketo-functionalized cholate derivatives was successfully synthesized as a candidate for 193-nm lithography. The diazodiketo group was introduced into the cholate derivatives to provide the solubility change and to eliminate the problems of chemically amplified resists. The decomposition temperature of the resist was found to be 130°C. The initial lithographic studies showed the feasibility of the resist to be used as a candidate for 193-nm lithography.

Paper Details

Date Published: 4 May 2005
PDF: 8 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.599622
Show Author Affiliations
Ramakrishnan Ganesan, Korea Advanced Institute of Science and Technology (South Korea)
Jae-Hak Choi, Korea Advanced Institute of Science and Technology (South Korea)
Hyo-Jin Yun, Korea Advanced Institute of Science and Technology (South Korea)
Young-Gil Kwon, Korea Advanced Institute of Science and Technology (South Korea)
Kyoung-Seon Kim, Korea Advanced Institute of Science and Technology (South Korea)
Tae-Hwan Oh, Korea Advanced Institute of Science and Technology (South Korea)
Jin-Baek Kim, Korea Advanced Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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