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Proceedings Paper

Reflectance change of Si- and Ru-capped Mo/Si multilayer mirrors caused by intense EUV irradiation
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Paper Abstract

An EUV irradiation and reflectance measurement system using intense EUV radiation emitted from a long undulator at the NewSUBARU synchrotron radiation (SR) facility was developed. The system can measure the real-time reflectance drop during intense EUV irradiation and reflectance mapping as well as the photoemission current after irradiation at a fixed energy for atom absorption. The irradiated EUV beam was very intense, and the power density was about 400 mW/mm2. The reflectances of Si- and Ru-capped Mo/Si multilayer mirrors (MLMs) were measured under several conditions of EUV power, i.e., 120, 15, and 5 mW/mm2 for Si-capped MLMs, or of water vapor, i.e., 6.6x10-5 and 1.3x10-2 Pa for Ru-capped MLMs. Each reflectance was reduced as the dose was increased. The reflectance was significantly reduced at the higher partial pressure of water vapor. When the intensity of the beam flux was reduced using ND filters, the reflectance was significantly reduced under the same conditions of atmosphere and dose. Carbon cleaning and oxidation were progressed in the beam center although carbon deposition was much progressed in the beam fringe for Si-capped MLM. Ru-capped MLM was more resistant to radiation damage than Si-capped MLM at each partial pressure of water vapor. The results of X-ray photoelectron spectroscopy (XPS) for Ru-capped MLM showed that deposited and desorbed carbons were balanced at the beam center and carbon deposition occurred on the fringe of the beam.

Paper Details

Date Published: 6 May 2005
PDF: 7 pages
Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); doi: 10.1117/12.599577
Show Author Affiliations
Yukinobu Kakutani, Univ. of Hyogo (Japan)
Masahito Niibe, Univ. of Hyogo (Japan)
Hiromitsu Takase, Extreme Ultraviolet Lithography System Development Association (Japan)
Shigeru Terashima, Extreme Ultraviolet Lithography System Development Association (Japan)
Hiroyuki Kondo, Extreme Ultraviolet Lithography System Development Association (Japan)
Shuichi Matsunari, Extreme Ultraviolet Lithography System Development Association (Japan)
Takashi Aoki, Extreme Ultraviolet Lithography System Development Association (Japan)
Yoshio Gomei, Extreme Ultraviolet Lithography System Development Association (Japan)
Yasuaki Fukuda, Extreme Ultraviolet Lithography System Development Association (Japan)


Published in SPIE Proceedings Vol. 5751:
Emerging Lithographic Technologies IX
R. Scott Mackay, Editor(s)

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