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Proceedings Paper

Progressive ArF exposure tool for 65nm node lithography
Author(s): Nobuyuki Irie; Masato Hamatani; Masahiro Nei
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Paper Abstract

To meet shrinkage demands of device pattern size, a new platform ArF exposure tool , NSR-S308F, has been developed with an extremely high NA projection lens. This equipment has been developed not only for ensuring better imaging of dry ArF, but also for achieving imaging enhancement of immersion ArF. To satisfy imaging and overlay accuracy requirements for 65nm node lithography, the heat management, body stiffness, and reaction force canceling system have been drastically improved. Optimized illumination conditions and polarized illumination1 have been developed to expand the severe process margin for ArF dry exposure tools. In addition, some applications support: the maximization of imaging performance of S308F; the aerial image measurement function2 to correct aberration of projection lens; the optimization software of lens aberration in a specific device pattern, and special software to realize excellent mix and match accuracy. Latest evaluation results and the improvement items of S308F will be presented.

Paper Details

Date Published: 12 May 2005
PDF: 9 pages
Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); doi: 10.1117/12.599564
Show Author Affiliations
Nobuyuki Irie, Nikon Corp. (Japan)
Masato Hamatani, Nikon Corp. (Japan)
Masahiro Nei, Nikon Corp. (Japan)

Published in SPIE Proceedings Vol. 5754:
Optical Microlithography XVIII
Bruce W. Smith, Editor(s)

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