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Proceedings Paper

Development and evaluation of an F2 laser for immersion interference lithography at 157nm
Author(s): Yasuo Itakura; Youichi Kawasa; Osamu Wakabayashi; Masato Moriya; Shinji Nagai; Akira Sumitani; Takuya Hagiwara; Toshiyuki Ishimaru; Shou Tsuji; Kiyoshi Fujii; Wataru Wakamiya
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Paper Abstract

A two-beam interference lithography system based on a line-selected F2 laser has been developed. Resist patterns with a 60nm line and space (L&S) resolution were produced by the interferometer by F2 immersion lithography. The F2 laser performance had been especially optimized for this application. The spectral emission at the 157.53nm line was less than 1% of the main line emission at 157.63nm. The main line had a deconvolved spectral bandwidth of 0.84 pm (full width at half maximum (FWHM)). The degree of horizontal linear polarization was above 0.73 and the visibility of spatial coherence was larger than 0.83 at a pinhole distance of 0.1mm.

Paper Details

Date Published: 12 May 2004
PDF: 10 pages
Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.599512
Show Author Affiliations
Yasuo Itakura, Komatsu Ltd. (Japan)
Youichi Kawasa, Komatsu Ltd. (Japan)
Osamu Wakabayashi, Komatsu Ltd. (Japan)
Masato Moriya, Komatsu Ltd. (Japan)
Shinji Nagai, Komatsu Ltd. (Japan)
Akira Sumitani, Komatsu Ltd. (Japan)
Takuya Hagiwara, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiyuki Ishimaru, Semiconductor Leading Edge Technologies, Inc. (Japan)
Shou Tsuji, Semiconductor Leading Edge Technologies, Inc. (Japan)
Kiyoshi Fujii, Semiconductor Leading Edge Technologies, Inc. (Japan)
Wataru Wakamiya, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 5754:
Optical Microlithography XVIII
Bruce W. Smith, Editor(s)

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