Share Email Print

Proceedings Paper

Resist development status for immersion lithography
Author(s): Hiromitsu Tsuji; Masaaki Yoshida; Keita Ishizuka; Tomoyuki Hirano; Kotaro Endo; Mitsuru Sato
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Immersion lithography has already demonstrated superior performance for next generation semiconductor manufacturing, while some challenges with contact immersion fluids and resist still remain. There are many interactions to be considered with regards to the solid and liquid interface. Resist elusion in particular requires very careful attention since the impact on the lens and fluid supply system in exposure tool could pose a significant risk at the manufacturing stage. TOK developed a screening procedure to detect resist elution of ion species down to ppb levels during non and post exposure steps. It was found that the PAG cation elution is affected by molecular weight and structure while the PAG anion elution was dependent on the molecular structure and mobility. In this paper, lithographic performance is also discussed with the low elution type resist.

Paper Details

Date Published: 4 May 2005
PDF: 7 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.599485
Show Author Affiliations
Hiromitsu Tsuji, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Masaaki Yoshida, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Keita Ishizuka, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Tomoyuki Hirano, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Kotaro Endo, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Mitsuru Sato, Tokyo Ohka Kogyo Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

© SPIE. Terms of Use
Back to Top