Share Email Print
cover

Proceedings Paper

Cycloolefin copolymer containing hindered hydroxyl group for 193nm photoresist
Author(s): Seung Duk Cho; Hyun Sang Joo; Dong Chul Seo; Ji Young Song; Kyoung Mun Kim; Joo Hyeon Park; Jae Chang Jung; Sung Koo Lee; Cheol Kyu Bok; Seung Chan Moon
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The basic requirements for polymer design rule in photoresist are as following. The performances of the photoresist relate to transmittance, adhesion on BARC material, dry etch resistance and process margin as a function of the exposure tool. However, it is very difficult for us to find the polymer that has good performance for 193 nm ArF photoresist, because it has many limitations as target feature size of photoresist become smaller. One of the most important properties in it is adhesion. Researchers usually introduce functional group, as an adhesion promoter, such as carboxylic acid group, hydroxyl group and lactone group at the side chain of the polymer. Carboxylic acid group represents the highest adhesive property, but it has poor dark erosion because of affinity with developer, 2.38 wt% TMAH solution. Lactone group has a limit for introduction as a functional group because it can cause low dry etch resistance and pattern slope. On the other hand, in case of primary alcohol, the hydroxyl group occurs cross-link with carbonyl unit of a neighboring unit. We have recently synthesized cycloolefin copolymer, which has a secondary hindered alcohol in its side chain. And they showed good performances in adhesion, resolution, PED stability, processing window, dry etch resistance, and good pattern profile in both L/S and C/H pattern profile. In this paper we will discuss the properties and the evaluation results.

Paper Details

Date Published: 4 May 2005
PDF: 11 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.599443
Show Author Affiliations
Seung Duk Cho, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Hyun Sang Joo, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Dong Chul Seo, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Ji Young Song, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Kyoung Mun Kim, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Joo Hyeon Park, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Jae Chang Jung, Hynix Semiconductor Inc. (South Korea)
Sung Koo Lee, Hynix Semiconductor Inc. (South Korea)
Cheol Kyu Bok, Hynix Semiconductor Inc. (South Korea)
Seung Chan Moon, Hynix Semiconductor Inc. (South Korea)


Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

© SPIE. Terms of Use
Back to Top