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Proceedings Paper

Lithographic performance of high-numerical-aperture (NA=0.3) EUV small-field exposure tool (HINA)
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Paper Abstract

Three sets of projection optics (Sets 1, 2, and 3) were fabricated to the mark of a wave front error (WFE) of less than 1 nm. The RMS WFE is 7.5 nm for Set 1, 1.9 nm for Set 2, and at most 0.9 nm for Set 3. In addition, the RMS mid-spatial frequency roughness (MSFR), which affects flare, is 0.34 nm for Set 2 and 0.17 nm for Set 3. This paper discusses the current lithographic performance of HINA, especially the evaluation of flare and the replication of fine-pitch patterns. Several EUV masks were fabricated to evaluate the effects of flare and to replicate fine-pitch patterns. In the case of Set 2 optics, 90 nm lines and spaces were barely delineated using a bright-field mask due to the RMS MSFR of 0.34 nm, and replication of 70 nm lines and spaces were achieved using a dark-field mask. Since the RMS WFE and the RMS MSFR for Set 3 optics are half as much as that for Set 2 optics, the lithographic performance of HINA is markedly improved. 50 nm lines and spaces of non-chemically-amplified resist were delineated with the illumination condition of a partial coherence, σ, of 0.8 and 45 nm lines and spaces were delineated with the annular illumination condition of outer σ of 0.8 and inner σ of 0.5. In addition ultimate resolution of 30 nm lines and spaces of chemically-amplified resist was performed under the coherent illumination condition of σ of 0.0.

Paper Details

Date Published: 6 May 2005
PDF: 8 pages
Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); doi: 10.1117/12.599435
Show Author Affiliations
H. Oizumi, Association of Super-Advanced Electronics Technologies (Japan)
Y. Tanaka, Association of Super-Advanced Electronics Technologies (Japan)
F. Kumasaka, Association of Super-Advanced Electronics Technologies (Japan)
I. Nishiyama, Association of Super-Advanced Electronics Technologies (Japan)
H. Kondo, Nikon Corp. (Japan)
M. Shiraishi, Nikon Corp. (Japan)
T. Oshino, Nikon Corp. (Japan)
K. Sugisaki, Nikon Corp. (Japan)
K. Murakami, Nikon Corp. (Japan)

Published in SPIE Proceedings Vol. 5751:
Emerging Lithographic Technologies IX
R. Scott Mackay, Editor(s)

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