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Proceedings Paper

New polymer platform of BARC for ArF lithography
Author(s): Yoshiomi Hiroi; Takahiro Kishioka; Rikimaru Sakamoto; Daisuke Maruyama; Yasushi Sakaida; Takashi Matsumoto; Yasuyuki Nakajima; SangMun Chon; YoungHo Kim; Sangwoong Yoon; Seok Han; YoungHoon Kim; EunYoung Yoon
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Paper Abstract

We found a new polymer platform for ArF BARC that can be prepared by addition polymerization. This system not only improves resist pattern collapse, but also allows control of the optimum film thickness, and etch rate by combination of compounds, method of polymerization (molecular weight control), and additives. Moreover, these materials have the unique characteristic that the resist profiles change little even if the type of resist changes.

Paper Details

Date Published: 4 May 2005
PDF: 8 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.599421
Show Author Affiliations
Yoshiomi Hiroi, Nissan Chemical Industries, Ltd. (Japan)
Takahiro Kishioka, Nissan Chemical Industries, Ltd. (Japan)
Rikimaru Sakamoto, Nissan Chemical Industries, Ltd. (Japan)
Daisuke Maruyama, Nissan Chemical Industries, Ltd. (Japan)
Yasushi Sakaida, Nissan Chemical Industries, Ltd. (Japan)
Takashi Matsumoto, Nissan Chemical Industries, Ltd. (Japan)
Yasuyuki Nakajima, Nissan Chemical Industries, Ltd. (Japan)
SangMun Chon, Samsung Electronics Co., Ltd. (South Korea)
YoungHo Kim, Samsung Electronics Co., Ltd. (South Korea)
Sangwoong Yoon, Samsung Electronics Co., Ltd. (South Korea)
Seok Han, Samsung Electronics Co., Ltd. (South Korea)
YoungHoon Kim, Samsung Electronics Co., Ltd. (South Korea)
EunYoung Yoon, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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