Share Email Print

Proceedings Paper

Optical digital profilometry (ODP) feasibility studies for CD control in lithography applications
Author(s): Masahiro Yamamoto; Shoichi Iwabuchi
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A series of experiments were performed to determine if Tokyo Electron's (TEL) Optical Digital Profilometry (ODP) scatterometry technology could meet the requirements for CD (Critical Dimension) control in lithography applications. ODP technology, using broadband optical spectra taken from grating structures, is non-destructive, and in addition to CD, provides sidewall angle (SWA), profile and film thickness information in a single measurement. ODP's output was compared to CD-SEM (Critical Dimension-Scanning Electron Microscopy) to develop the correlation of different metrology techniques. ODP was able to demonstrate excellent correlation to CD-SEM and provide robust uniformity measurement with high repeatability. ODP measurements were also used to optimize within-wafer CD uniformity by controlling the scanner process parameters. The high resolution of CD and SWA data taken by ODP demonstrated high sensitivity to scanner process control and a significant reduction in CD variation. From the experimental results, the ODP technology was well qualified for CD control in lithography applications.

Paper Details

Date Published: 10 May 2005
PDF: 8 pages
Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); doi: 10.1117/12.599407
Show Author Affiliations
Masahiro Yamamoto, Tokyo Electron Ltd. (Japan)
Shoichi Iwabuchi, Tokyo Electron Ltd. (Japan)

Published in SPIE Proceedings Vol. 5752:
Metrology, Inspection, and Process Control for Microlithography XIX
Richard M. Silver, Editor(s)

© SPIE. Terms of Use
Back to Top