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Proceedings Paper

Application of spectroscopic scatterometry method in hole matrices analysis
Author(s): R. Quintanilha; J. Hazart; P. Thony; D. Henry
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Paper Abstract

This paper focuses on the capability of the spectroscopic scatterometry method to determine holes features parameters from experimental 3D-target. Scatterometry uses optical tools for spectra recording as ellipsometer form KLA TENCOR and a MMFE (Modal Method of Fourier Expansion) software tool including an advanced electromagnetic simulator and an optimization loop for data extraction. This study reports on 3D-MMFE regression of different dense holes square and rectangular matrix structures on the simplest structure-resist on silicon-to extract diameter, height of the holes. The holes diameter is from 90nm to 500nm, and the duty ratio is from 1:1 to 2:2 (CD/Space). To be close to real production stack the same matrices have been studied on more complex stack (close to via level with different dielectric material: FSG, dense SiOC). Finally this study is focused on an analysis on simulation and experiment of the relative sensitivity position of a hole inside the basic element of diffraction. That shows the possibility of scatterometry measurement in detecting via shift.

Paper Details

Date Published: 10 May 2005
PDF: 13 pages
Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); doi: 10.1117/12.599373
Show Author Affiliations
R. Quintanilha, CEA-LETI (France)
J. Hazart, CEA-LETI (France)
P. Thony, CEA-LETI (France)
D. Henry, STMicroelectronics (France)


Published in SPIE Proceedings Vol. 5752:
Metrology, Inspection, and Process Control for Microlithography XIX
Richard M. Silver, Editor(s)

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