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Proceedings Paper

0.31k1 ArF lithography for 70-nm DRAM
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Paper Abstract

512Mbit DRAM with 70 nm design rule was tailored using 0.31k1 ArF lithography technologies. Of the critical mask layers, four pattern layouts were demonstrated: brick wall, line/space, contact and line/contact patterns. For the sake of cost reduction, the conventional technologies were used. Results has shown that SLR (Single-Layer Resist) process, half-tone PSM and the conventional illuminations had a potential of manufacturing 70 nm DRAM. However, it was found that brick wall patterns had asymmetrical shape and total CD uniformity was out of target raging 9.2 nm through 16.3 nm depending mask layouts. We prospect that higher contrast resist and more elaborate resist process will address these problems sooner or later. In case the immersion lithography is not ready around the right time, the feasibility of 0.29k1 ArF lithography was studied through simulation and test, which represented that 0.29k1 technologies were likely to be applied for the development of 60 nm DRAM with the aid of RETs (Resolution Enhancement Technologies) including customized illumination and new hard mask process.

Paper Details

Date Published: 4 May 2005
PDF: 11 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.599348
Show Author Affiliations
Cheolkyu Bok, Hynix Semiconductor Inc. (South Korea)
Ki-Lyoung Lee, Hynix Semiconductor Inc. (South Korea)
Jun-Taek Park, Hynix Semiconductor Inc. (South Korea)
Young-Sun Hwang, Hynix Semiconductor Inc. (South Korea)
Tae-Seung Eom, Hynix Semiconductor Inc. (South Korea)
Seo-Min Kim, Hynix Semiconductor Inc (South Korea)
Geunsu Lee, Hynix Semiconductor Inc. (South Korea)
Jae-Chang Jung, Hynix Semiconductor Inc. (South Korea)
Chang-Moon Lim, Hynix Semiconductor Inc. (South Korea)
Seung-Chan Moon, Hynix Semiconductor Inc. (South Korea)
Jin-Woong Kim, Hynix Semiconductor Inc. (South Korea)


Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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