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Top antireflective coating process for immersion lithography
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Paper Abstract

To accomplish minimizing feature size to sub 60nm, new light sources for photolithography are emerging, such as F2(157nm), and EUV(13nm). However, these new lithographic technologies have many problems to be solved for real device production. In case of F2 lithography, pellicle issue makes it difficult to use of F2 source in mass production. In case of EUV, light source and mask fabrication issues must be solved for real device application. For these reasons, instead of new light sources, extension of dry ArF lithography has been studied for sub 70nm device production by using Resolution Enhancement Technology (RET) such as using high NA tools, off axis illumination, and phase shift mask. Recently, a new technology called ArF immersion lithography is emerging as a next generation lithography. The first problem of this technology is contamination issues that come from the dissolution of contaminants from the photoresist to the immersion liquid. The second is optical problem that comes from the using hyper NA system. To solve these two problems, we have developed top antireflective coating (TARC) material. This TARC material can be coated on resist without damage to the resist property. In addition to, this TARC material is easily developable by conventional 2.38 wt% TMAH solution. The reflective index of this TARC is adjusted to 1.55, so it can act as an antireflective material. To this TARC material for immersion, quencher gradient resist process (QGRP) was applied also. As a result, we could improve resolution and process margin. However, some of resists showed defects that were generated by this TARC material and QGRP. To solve this defect problem, we introduced buffer function to the TARC material. Thanks to this buffer function, we could minimize defects of resist pattern in immersion lithography.

Paper Details

Date Published: 4 May 2005
PDF: 8 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.599280
Show Author Affiliations
Jae Chang Jung, Hynix Semiconductor Inc. (South Korea)
Sung Koo Lee, Hynix Semiconductor Inc. (South Korea)
Keun Do Ban, Hynix Semiconductor Inc. (South Korea)
Seo Min Kim, Hynix Semiconductor Inc. (South Korea)
Cheolkyu Bok, Hynix Semiconductor Inc. (South Korea)
Chang Moon Lim, Hynix Semiconductor Inc. (South Korea)
Seung Chan Moon, Hynix Semiconductor Inc. (South Korea)

Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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