Share Email Print

Proceedings Paper

ARC and gap fill material with high etch rate for advanced dual damascene process
Author(s): Tetsuya Shinjo; Satoshi Takei; Yasushi Sakaida; Anwei Qin; Yasuyuki Nakajima
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In the case of LSI pattern rules with linewidth of 0.1μm or less, the conventional LSI process is no longer adequate and new process and materials are needed to further enhance the performance of LSI. The materials used to reduce delay include a wiring material, Cu, and a low-k film for interlayer insulation. The technology specially developed for using Cu instead of Al as a wiring material is Dual Damascene process (DD process). In DD process, bottom anti-reflective coating (BARC) and gap fill materials are applied on a substrate of huge topography. Therefore, the gap fill material has to provide a coating of reduced thickness bias between the areas of isolated-via and dense-via, have a higher etch rate than ArF resists, be void free, and have no intermixing with resists and BARC. In order to achieve lower dielectric constant, porous low-k materials will be used at BEOL for the next generation. Etch rates of porous low-k materials are higher than that of conventional low-k materials, which in turn requires a gap fill material of even higher etch rate. This paper describes the new BARC and gap fill material with high etch rate for 45 - 65 node DD processes. The polymer of new materials applies high oxygen content for high etch rate. The performance and via-filling properties in BARC (NCA4401C) and gap fill material (NCA2131) are discussed.

Paper Details

Date Published: 4 May 2005
PDF: 8 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.599249
Show Author Affiliations
Tetsuya Shinjo, Nissan Chemical Industries, Ltd. (Japan)
Satoshi Takei, Nissan Chemical Industries, Ltd. (Japan)
Yasushi Sakaida, Nissan Chemical Industries, Ltd. (Japan)
Anwei Qin, Brewer Science, Inc. (United States)
Yasuyuki Nakajima, Nissan Chemical Industries, Ltd. (Japan)

Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

© SPIE. Terms of Use
Back to Top