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Proceedings Paper

Novel single-layer i-line positive resist lift-off process with oxidation step in develop
Author(s): Jianxin Zhu; David N. Tomes; Frank Yaghmaie; Rosemary Bell
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Paper Abstract

A novel single-layer Rohm and Hass SPR220 lift-off processes with oxidation step in a double-cycle develop is introduced to offer promising lift-off profiles. First, the coated wafer uses a typical Pre-soak process before exposure to introduce an inhibition layer in the film. After exposure and PEB, a three-step (develop-oxidation-develop) develop process is used. Oxidation step is done by rinsing in DI water and drying the film after the first develop step prior to the second develop step. SEM cross-section inspection shows the wafers have gone through the oxidation step between the two develop cycles and present an ideal lift-off profile. This work has shown these profiles are not attainable without the oxidation step. The lift-off profile is repeatable as resist thickness changes between 2 - 6μm. The process also shows excellent process window capability and stability. It can be ideally used for thin-film deposition or a self-aligned one-mask etch/deposition application. We will also discuss and show process development for films at thickness’ of 1μm or less for smaller CD applications.

Paper Details

Date Published: 4 May 2005
PDF: 6 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.599176
Show Author Affiliations
Jianxin Zhu, Seagate Technology LLC (United States)
David N. Tomes, Rohm and Haas Electronic Materials (United States)
Frank Yaghmaie, Rohm and Haas Electronic Materials (United States)
Rosemary Bell, Rohm and Haas Electronic Materials (United States)


Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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