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Proceedings Paper

PSM polarimetry: monitoring polarization at 193nm high-NA and immersion with phase shifting masks
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Paper Abstract

A technique using phase shifting test mask patterns is introduced for monitoring polarization balance of the illumination in high-NA and immersion projection printing systems. A set of test mask patterns are derived from high-NA proximity effects and serve to scatter light into high angle spatial frequencies. This creates a central intensity dependent only on the local state of polarization. A test mask consisting of multiple patterns is proposed to monitor the polarization from any arbitrary illumination scheme. Proper calibration of the test reticle enables reasonable mask making limitations and mask topography effects to be tolerated. A set of linear equations enable determination of the Stokes parameters from a series of resist images. Practical examples are simulated with rigorous electromagnetic theory. In resist, this technique is likely to monitor polarization with a sensitivity of over 1.5 percent of the clear field per percent change in polarization state for on-axis illumination, or over 0.75 percent for off-axis illumination. The effects of various realistic imaging conditions are discussed.

Paper Details

Date Published: 12 May 2004
PDF: 12 pages
Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.599058
Show Author Affiliations
Gregory McIntyre, Univ. of California/Berkeley (United States)
Advanced Micro Devices (United States)
Andrew Neureuther, Univ. of California/Berkeley (United States)


Published in SPIE Proceedings Vol. 5754:
Optical Microlithography XVIII
Bruce W. Smith, Editor(s)

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