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Proceedings Paper

Mask enhancer technology for 45-nm node contact hole fabrication
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Paper Abstract

We have proposed a new resolution enhancement technology using attenuated mask with phase shifting aperture, named "Mask Enhancer", for random-logic contact hole pattern printing. In this study, we apply a new mask blank on Mask Enhancer in order to prevent the light intensity loss caused by the mask topography effect. We also perform to expose the new Mask Enhancer on the first ArF immersion scanner, ASML AT1150i. We demonstrate that the new Mask Enhancer can achieve 45nm-node contact hole printing with sufficient lithographic performance with combination of immersion lithography.

Paper Details

Date Published: 12 May 2005
PDF: 11 pages
Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); doi: 10.1117/12.598977
Show Author Affiliations
Takashi Yuito, IMEC (Belgium)
Matsushita Electric Industrial Co., Ltd. (Japan)
Vincent Wiaux, IMEC (Belgium)
Lieve Van Look, IMEC (Belgium)
Geert Vandenberghe, IMEC (Belgium)
Shigeo Irie, Matsushita Electric Industrial Co., Ltd. (Japan)
Takahiro Matsuo, Matsushita Electric Industrial Co., Ltd. (Japan)
Akio Misaka, Matsushita Electric Industrial Co., Ltd. (Japan)
Hisashi Watanabe, Matsushita Electric Industrial Co., Ltd. (Japan)
Masaru Sasago, Matsushita Electric Industrial Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 5754:
Optical Microlithography XVIII
Bruce W. Smith, Editor(s)

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