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Proceedings Paper

Interfacial structure of photoresist thin films in developer solutions
Author(s): Vivek M. Prabhu; Bryan D. Vogt; Wen-Li Wu; Jack F. Douglas; Eric K. Lin; Sushil K. Satija; Dario L. Goldfarb; Hiroshi Ito
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Paper Abstract

A depth profile of the base developer counterion concentration within thin photoresist films was measured in-situ using contrast variant specular neutron reflectivity to characterize the initial swelling stage of the film dissolution. We find a substantial counterion depletion near the substrate and an enrichment near the periphery of the film extending into the solution. These observations challenge our understanding of the charge distribution in photoresist and polyelectrolyte films and are important for understanding film dissolution in medical and technological applications.

Paper Details

Date Published: 4 May 2005
PDF: 10 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.598956
Show Author Affiliations
Vivek M. Prabhu, National Institute of Standards and Technology (United States)
Bryan D. Vogt, National Institute of Standards and Technology (United States)
Wen-Li Wu, National Institute of Standards and Technology (United States)
Jack F. Douglas, National Institute of Standards and Technology (United States)
Eric K. Lin, National Institute of Standards and Technology (United States)
Sushil K. Satija, National Institute of Standards and Technology (United States)
Dario L. Goldfarb, IBM T.J. Watson Research Ctr. (United States)
Hiroshi Ito, IBM Almaden Research Ctr. (United States)


Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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