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Proceedings Paper

Optimization of equipment for 193-nm immersion processing
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Paper Abstract

For immersion lithography at 193 nm, there is concern that the immersion of resist in water during exposure might cause water to penetrate the resist or resist components to dissolve into water, or that water remaining after exposure might affect subsequent processes. It is also thought that the same concerns are likely to be felt even if using a protective top coat. In this paper, we report on three key findings. First, after immersing resist in water using virtual immersion methods and evaluating the effect of water on critical dimension (CD) and defects, it was found that CD changes and defects increase. Second, as a result of performing the same evaluation when using a top coat, it was found that CD changes and defects increase despite top-coat application. Finally, a significant amount of knowledge can be obtained for the development of optimal 193-nm immersion lithography equipment as a result of wafer processing using real inline tools for immersion exposure and coating/developing.

Paper Details

Date Published: 4 May 2005
PDF: 8 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.598686
Show Author Affiliations
Takafumi Niwa, Tokyo Electron Kyushu Ltd. (Japan)
Masashi Enomoto, Tokyo Electron Kyushu Ltd. (Japan)
Satoru Shimura, Tokyo Electron AT Ltd. (Japan)
Hideharu Kyoda, Tokyo Electron Kyushu Ltd. (Japan)
Tetsu Kawasaki, Tokyo Electron AT Ltd. (Japan)
Junichi Kitano, Tokyo Electron Kyushu Ltd. (Japan)

Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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