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Proceedings Paper

Determination of mask-induced polarization effects occurring in hyper NA immersion lithography
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Paper Abstract

As the lithographic projection technology of the future will require higher numerical aperture (NA) values, new physical effects will have to be taken into consideration. Immersion lithography will result in NA values of up to 1.2 and above. New optical effects like 3D shadowing, effects from oblique incident angles, mask-induced polarization of the transmitted light and birefringence from the substrate should be considered when the masks optical performance is evaluated. This paper addresses mask induced polarization effects from dense lines-and-space structures of standard production masks. On a binary and on an attenuated phase-shifting mask, which were manufactured at the Advanced Mask Technology Center (AMTC) transmission experimental investigations were performed. Measurements of diffraction efficiencies for TE- and TM-polarized light using three different incident angles are presented for all considered mask types and compared to simulations. The structures under investigation include line-space-pattern with varying pitches as well as varying duty cycles. Experimental results show good agreement with simulations.

Paper Details

Date Published: 12 May 2004
PDF: 12 pages
Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.598641
Show Author Affiliations
Silvio Teuber, Advanced Mask Technology Ctr. GmbH & Co. KG (Germany)
Karsten Bubke, Advanced Mask Technology Ctr. GmbH & Co. KG (Germany)
Ingo Hollein, Advanced Mask Technology Ctr. GmbH & Co. KG (Germany)
Ralf Ziebold, Infineon Technologies SC300 GmbH & Co. KG (Germany)
Jan Hendrik Peters, Advanced Mask Technology Ctr. GmbH & Co. KG (Germany)


Published in SPIE Proceedings Vol. 5754:
Optical Microlithography XVIII
Bruce W. Smith, Editor(s)

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