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Proceedings Paper

Studies on leaching of photoresist components by water
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Paper Abstract

Immersion lithography has drawn tons of interests as a potential solution for sub-65nm patterning. High refractive index liquid, which is filled in the gap between exposure lens and a photoresist, can improve a resolution through increased effective numerical aperture (NA) of the exposure system. Most attractive liquid for this purpose is water. Our works were conducted as a part of the basic study for immersion lithography and aimed for the verification of leached resist components by water. It was observed that leaching relies largely on the free volume of a polymer and anion size of photoacid generator (PAG). The larger free volume and the smaller anion, the larger T-top resist profile was generated. Additionally, effects of solvents, quenchers and polarity of the polymer were investigated. Detailed results will be reported in this paper.

Paper Details

Date Published: 4 May 2005
PDF: 9 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.598618
Show Author Affiliations
Seung Keun Oh, Dongjin Semichem Co., Ltd. (South Korea)
Jong Yong Kim, Dongjin Semichem Co., Ltd. (South Korea)
Young Ho Jung, Dongjin Semichem Co., Ltd. (South Korea)
Jae Woo Lee, Dongjin Semichem Co., Ltd. (South Korea)
Deog Bae Kim, Dongjin Semichem Co., Ltd. (South Korea)
Jaehyun Kim, Dongjin Semichem Co., Ltd. (South Korea)
Geun Su Lee, Hynix Semiconductor Inc. (South Korea)
Sung Koo Lee, Hynix Semiconductor Inc. (South Korea)
Keun Do Ban, Hynix Semiconductor Inc. (South Korea)
Jae Chang Jung, Hynix Semiconductor Inc. (South Korea)
Cheol Kyu Bok, Hynix Semiconductor Inc. (South Korea)
Seung Chan Moon, Hynix Semiconductor Inc. (South Korea)


Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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