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Proceedings Paper

Diffusion contributions to line end shortening in 193-nm photolithography
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Paper Abstract

As the device design rule is continuously shrinking, line end shortening (LES) has grown to be one of the critical problems in 193 nm photolithography. Among several factors causing LES, diffusivity of photo-generated acid seems to have the most profound effect. Also, diffusivity of base quencher produces equivalent effects on LES, but in the reversed way. Besides, post-exposure bake (PEB) condition is another key factor by affecting diffusion length of photo-generated acid. Low LES can be achieved by lowering PEB temperature or shortening its time. In this paper, we will discuss our experimental results to assess the determining factors of LES and suggest controllability of LES in ArF lithographic process.

Paper Details

Date Published: 4 May 2005
PDF: 9 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.598615
Show Author Affiliations
Eun-Kyung Son, Dongjin Semichem Co., Ltd. (South Korea)
Jung-Woo Kim, Dongjin Semichem Co., Ltd. (South Korea)
Sang-Hyang Lee, Dongjin Semichem Co., Ltd. (South Korea)
Chan-Sik Park, Dongjin Semichem Co., Ltd. (South Korea)
Jae-Woo Lee, Dongjin Semichem Co., Ltd. (South Korea)
Jaehyun Kim, Dongjin Semichem Co., Ltd. (South Korea)
Geun-Su Lee, Hynix Semiconductor Inc. (South Korea)
Sung-Koo Lee, Hynix Semiconductor Inc. (South Korea)
Keun-Do Ban, Hynix Semiconductor Inc. (South Korea)
Jae-Chang Jung, Hynix Semiconductor Inc. (South Korea)
Cheol Kyu Bok, Hynix Semiconductor Inc. (South Korea)
Seung-Chan Moon, Hynix Semiconductor Inc. (South Korea)


Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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