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Proceedings Paper

Implementation of KrF 0.29 k1 lithography
Author(s): Hyeong Soo Kim; Seok Kyun Kim; Young Sik Kim; Sang Man Bae; Dong Heok Park; Young Deuk Kim; Yoon Suk Hyun; Hyoung Reun Kim; Keun Kyu Kong; Min Seok Son; Yong Soon Jung; Bong Ho Choi
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Paper Abstract

One of the crucial tasks of semiconductor process is reduction of manufacturing cost by shrinking the design rule with the help of fine patterning technologies. For high density DRAM application, we explored 0.29 k1 lithography with KrF 0.80NA scanner. Well-known lithography technologies such as asymmetric crosspole, dipole illumination and 6% attenuated PSMs were used for this experiment. Illumination source and mask layout optimization were carried out iteratively to meet CD target, and high contrast thin resist was applied to improve pattern fidelity. Some of the biggest challenges were coping with large MEEF and reducing simulation error. Abnormal non-open fail, probably due to large MEEF, was observed at a dense contact hole pattern. To cope with non-open fail, we tested multi-PSM which composed of alternating PSM along the x-axis direction and 6% attenuated PSM along the y-axis direction. Also we pushed sigma offset of illumination pupil more strongly than exposure tool's specification and there was no serious drawbacks of partial coherency extension. Accurate partial coherence measurement was important for obtaining target CDs and reducing OPC error. For some layers, unexpected simulation error was occurred especially at the patterns of peripheral circuit, therefore we had to calibrate simulation parameters of in-house tool and commercial tool (Solid-C) for OPC simulation. Finally we successfully demonstrated 0.29k1 KrF lithography by showing process yield over 58% in 512Mb DRAM having design rule of 90nm. Based on the results we obtained, we can conclude that 0.29k1 lithography is quite feasible for mass production and 60nm design rule DRAM devices can be manufactured with ArF dry 0.93NA. Since dry 0.93NA corresponds to 1.33NA in ArF water immersion with respect to k1, we can expect that it is possible to fabricate 42nm DRAM devices with ArF immersion lithography.

Paper Details

Date Published: 12 May 2004
PDF: 11 pages
Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.598610
Show Author Affiliations
Hyeong Soo Kim, Hynix Semiconductor Inc. (South Korea)
Seok Kyun Kim, Hynix Semiconductor Inc. (South Korea)
Young Sik Kim, Hynix Semiconductor Inc. (South Korea)
Sang Man Bae, Hynix Semiconductor Inc. (South Korea)
Dong Heok Park, Hynix Semiconductor Inc. (South Korea)
Young Deuk Kim, Hynix Semiconductor Inc. (South Korea)
Yoon Suk Hyun, Hynix Semiconductor Inc. (South Korea)
Hyoung Reun Kim, Hynix Semiconductor Inc. (South Korea)
Keun Kyu Kong, Hynix Semiconductor Inc. (South Korea)
Min Seok Son, Hynix Semiconductor Inc. (South Korea)
Yong Soon Jung, Hynix Semiconductor Inc. (South Korea)
Bong Ho Choi, Hynix Semiconductor Inc. (South Korea)

Published in SPIE Proceedings Vol. 5754:
Optical Microlithography XVIII
Bruce W. Smith, Editor(s)

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