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Proceedings Paper

New shrinkage technology for nano-contact hole formation
Author(s): Geunsu Lee; Jungwoo Park; Wonwook Lee; Cheolkyu Bok; Changmoon Lim; Sungchan Moon
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Paper Abstract

More simple and cost-effective shrinkage techniques for contact hole (C/H) are required instead of conventional technologies such as thermal flow, RELACS, SAFIER and CONPEAT with the aggressive reduction in size of devices. We have developed a new method, Coating Assisted Shrinkage of Space (CASS) process. This process simply coats polymer over the patterned wafer. It doesn't need a bake and rinse step for shrinkage. Sub-100 nm C/H patterns were successfully defined after coating CASS material with good profile.

Paper Details

Date Published: 4 May 2005
PDF: 6 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.598592
Show Author Affiliations
Geunsu Lee, Hynix Semiconductor Inc. (South Korea)
Jungwoo Park, Hynix Semiconductor Inc. (South Korea)
Wonwook Lee, Hynix Semiconductor Inc. (South Korea)
Cheolkyu Bok, Hynix Semiconductor Inc. (South Korea)
Changmoon Lim, Hynix Semiconductor Inc. (South Korea)
Sungchan Moon, Hynix Semiconductor Inc. (South Korea)


Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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