Share Email Print

Proceedings Paper

Lifetime characterization of capacitive RF MEMS switches
Author(s): Afshin Ziaei; Thierry Dean; Yves Mancuso
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

RF MEMS switches provide a low-cost, high performance solution to many RF/microwave applications and these switches will be important building blocks for designing phase shifters, switched filters and reflector array antennas for military and commercial markets. In this paper, progress in characterizing of THALES capacitive MEMS devices under high RF power is presented. The design, fabrication and testing of capacitive RF MEMS switches for microwave/mm- wave applications on high-resistivity silicon substrate is presented. The switches tested demonstrated power handling capabilities of 1W (30 dbm) for continuous RF power. The reliability of these switches was tested at various power levels indicating that under continuous RF power. In addition a description of the power failures and their associated operating conditions is presented. The PC-based test stations to cycle switches and measure lifetime under DC and RF loads have been developed. Best-case lifetimes of 1010 cycles have been achieved in several switches from different lots under 30 dbm RF power.

Paper Details

Date Published: 16 May 2005
PDF: 9 pages
Proc. SPIE 5763, Smart Structures and Materials 2005: Smart Electronics, MEMS, BioMEMS, and Nanotechnology, (16 May 2005); doi: 10.1117/12.598465
Show Author Affiliations
Afshin Ziaei, Thales Research and Technology (France)
Thierry Dean, Thales Research and Technology (France)
Yves Mancuso, Thales Airborne Systems (France)

Published in SPIE Proceedings Vol. 5763:
Smart Structures and Materials 2005: Smart Electronics, MEMS, BioMEMS, and Nanotechnology
Vijay K. Varadan, Editor(s)

© SPIE. Terms of Use
Back to Top