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Proceedings Paper

Impact of polarization for an attenuated phase-shift mask with ArF hyper-NA lithography
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Paper Abstract

In recent low-k1 lithography, the size of a mask pattern is becoming close to wavelength of the light source. The light intensity through the mask pattern is depending on polarization. TM polarization light is higher transmission than TE polarization light for a MoSi mask. This effect influences not only the zeroth-order light but the first-order light. On the other hand, TE polarization imaging makes higher contrast than TM polarization in two beam interference. Effects of polarization to resolution are not simple. Since an attenuated phase shift mask is used in order to obtain high contrast, it is necessary to take into consideration the influence of that. It is also taken into consideration that illumination light is not perpendicular incidence but oblique incidence for an ArF hyper-NA tool. We will perform a rigorous simulation in consideration of the above conditions. Hereby influence of the to the utmost resolution will be clarified by the rigorous simulation.

Paper Details

Date Published: 12 May 2004
PDF: 7 pages
Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.598458
Show Author Affiliations
Takashi Sato, Toshiba Corp. (Japan)
Ayako Endo, Toshiba Corp. (Japan)
Akiko Mimotogi, Toshiba Corp. (Japan)
Shoji Mimotogi, Toshiba Corp. (Japan)
Kazuya Sato, Toshiba Corp. (Japan)
Satoshi Tanaka, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 5754:
Optical Microlithography XVIII
Bruce W. Smith, Editor(s)

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