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Proceedings Paper

Particle generation mechanisms in vacuum processing tools
Author(s): Thomas T. H. Fu; Marylyn Hoy Bennett; R. Allen Bowling
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Paper Abstract

It is estimated that by the year 1995, as much as ninety percent of the contamination in IC manufacturing will be caused by equipment and processes. Contamination can be in the form of particles, defects, scratches, stains, and so on. All are major concerns for yielding ULSI devices. In order to eliminate process/equipment-induced particles, particle formation/generation must be understood before appropriate action can be taken to meet the contamination-free requirements of the future. A variety of vacuum processing tools were studied, including CVD, PECVD, and plasma etch systems with heat lamps, RF, and remote microwave energy sources. A particle collection and characterization methodology was adopted to analyze the particles generated from the vacuum processing tools. By using SEM and EDS to analyze particles collected from equipment chamber walls, both the particle morphology and composition were discerned. The elemental analyses indicate that the composition of particles varied a great deal depending on the chemical nature of the process, chamber material/process compatibility, and energy source.

Paper Details

Date Published: 1 June 1992
PDF: 8 pages
Proc. SPIE 1673, Integrated Circuit Metrology, Inspection, and Process Control VI, (1 June 1992); doi: 10.1117/12.59844
Show Author Affiliations
Thomas T. H. Fu, Texas Instruments Inc. (United States)
Marylyn Hoy Bennett, Texas Instruments Inc. (United States)
R. Allen Bowling, Texas Instruments Inc. (United States)


Published in SPIE Proceedings Vol. 1673:
Integrated Circuit Metrology, Inspection, and Process Control VI
Michael T. Postek, Editor(s)

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