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Proceedings Paper

Characterization of thickness and perfection of multilayer IC metallization films via x-ray interference phenomena
Author(s): Simon Bates; Mike Madden; Tommy Hom
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Paper Abstract

X ray interference, which arises from a coherent interaction between an incident x-ray beam and x rays refracted and reflected from interfaces within a sample, has been used to nondestructively study the film thickness and interface perfection of multilayer IC metallization films. The approach used to measure and analyze the interference patterns is discussed in detail. Results of the analysis are presented on a single Ti layer and an Al/Ti bilayer on Si. Determination of the Ti layer thickness for both samples was found to be self consistently accurate to better than 1%. The layer thickness values are compared and contrasted to the results of RBS analysis on the same samples.

Paper Details

Date Published: 1 June 1992
PDF: 8 pages
Proc. SPIE 1673, Integrated Circuit Metrology, Inspection, and Process Control VI, (1 June 1992); doi: 10.1117/12.59842
Show Author Affiliations
Simon Bates, Philips Electronic Instruments Co. (United States)
Mike Madden, Intel Corp. (United States)
Tommy Hom, Philips Electronic Instruments Co. (United States)


Published in SPIE Proceedings Vol. 1673:
Integrated Circuit Metrology, Inspection, and Process Control VI
Michael T. Postek, Editor(s)

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