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Proceedings Paper

Modeling of the influence of the defect position on the reflected intensity in EUV mask
Author(s): Maxime Besacier; Patrick Schiavone; Vincent Farys; Rafik Smaali
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Paper Abstract

In Extreme Ultraviolet Lithography, the electromagnetic modeling of the mask allows to determine the influence of the mask structure on the electromagnetic field. That makes it possible to take into account the presence of a defect modifying the multi-layer stack [1][2]. This paper presents the results of simulations, performed using a modal method, on the aerial image of the reflected intensity above the resist depending on the position of a defect with respect to an absorber pattern. These simulations allow to consider the influence of a defect not only on top of the structure but also everywhere inside the multilayer. The current method is the MMFE: Modal Method by Fourier Expansion. Modal methods are well adapted for EUV simulation mask due to materials and structure size.

Paper Details

Date Published: 6 May 2005
PDF: 11 pages
Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); doi: 10.1117/12.598415
Show Author Affiliations
Maxime Besacier, Lab. des Technologies de la Microelectronique, CNRS (France)
Patrick Schiavone, Lab. des Technologies de la Microelectronique, CNRS (France)
Vincent Farys, Lab. des Technologies de la Microelectronique, CNRS (France)
Rafik Smaali, Lab. des Technologies de la Microelectronique, CNRS (France)

Published in SPIE Proceedings Vol. 5751:
Emerging Lithographic Technologies IX
R. Scott Mackay, Editor(s)

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