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Proceedings Paper

Application of atomic-force microscopy to phase-shift masks
Author(s): Amalkumar P. Ghosh; Derek B. Dove; H. Kumar Wickramasinghe; R. Marshall Stowell; Ken Roessler
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Paper Abstract

In recent years, optical phase shifting masks (PSM) have become of interest for the enhancement of submicron lithographic techniques. Various schemes of PSMs have been published in the literature demonstrating improvement in performance of optical lithography techniques for 0.5 micrometers features and below. Some of these schemes require features on the PSMs that are micron or submicron in size. Monitoring the depth as well as the lateral dimensions of these small features is important in order to meet the dimensional tolerances. In this paper we report the application of an atomic force microscope (AFM) to obtain both quantitative as well as qualitative information about the etched features in a PSM.

Paper Details

Date Published: 1 June 1992
PDF: 11 pages
Proc. SPIE 1673, Integrated Circuit Metrology, Inspection, and Process Control VI, (1 June 1992); doi: 10.1117/12.59839
Show Author Affiliations
Amalkumar P. Ghosh, IBM/Thomas J. Watson Research Ctr. (United States)
Derek B. Dove, IBM/Thomas J. Watson Research Ctr. (United States)
H. Kumar Wickramasinghe, IBM/Thomas J. Watson Research Ctr. (United States)
R. Marshall Stowell, IBM/Manufacturing Technology Ctr. (United States)
Ken Roessler, IBM/Manufacturing Technology Ctr. (United States)


Published in SPIE Proceedings Vol. 1673:
Integrated Circuit Metrology, Inspection, and Process Control VI
Michael T. Postek, Editor(s)

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