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Proceedings Paper

Investigation on the effect of metallic impurity Zn in solvent during photolithography process
Author(s): Byoung-Tak Jeon; Ook-Hyun Kim; Jeong-Heon Baik; Jeong-Hyuk Ha; Il-Ho Lee; Weon-Sik Yang
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Paper Abstract

The trend toward narrower line widths in the manufacture of integrated circuits has put an increasing burden on contamination control in every aspect of semiconductor fabrication. For a deep sub micrometer device, metal contamination appearing on the device can cause fatal problems including increasing the leakage current at the p-n junction, decreasing the breakdown voltage of oxide. Many lithographic defects have been known and evaluated, however, the effects of metallic impurity (Zn) in solvent are seldom reported during lithography process. Solvents are component material for Photoresist and have been used for prewet, strippers, EBR, rinse and so on during photolithography process. Lithography plays a very important role because it is applied repeatedly onto the wafer surface during device manufacturing. Unfortunately, pattern lifting happened to well formation layer wafers that were reworked on a normal iline litho process after stripping the Photoresist with solvent (PGMEA). We also detected blocked pattern defect at 0.18 CMOS gate pattern coated with DUV resist applied solvent prewet step after BARC coating. From various investigations, we could know that pattern lifting and blocked defect were derived from solvent (PGMEA). In this paper, we show mechanism of adhesion fails and blocked defect happened by metallic impurity Zn in solvent during solvent rework and prewet on organic BARC film. It shows that proper control of metallic impurities in thinner is an important item in FAB.

Paper Details

Date Published: 10 May 2005
PDF: 10 pages
Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); doi: 10.1117/12.598349
Show Author Affiliations
Byoung-Tak Jeon, Dongbu-Anam Semiconductor (South Korea)
Ook-Hyun Kim, Dongbu-Anam Semiconductor (South Korea)
Jeong-Heon Baik, Dongbu-Anam Semiconductor (South Korea)
Jeong-Hyuk Ha, Dongbu-Anam Semiconductor (South Korea)
Il-Ho Lee, Dongbu-Anam Semiconductor (South Korea)
Weon-Sik Yang, Dongbu-Anam Semiconductor (South Korea)


Published in SPIE Proceedings Vol. 5752:
Metrology, Inspection, and Process Control for Microlithography XIX
Richard M. Silver, Editor(s)

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