Share Email Print

Proceedings Paper

A new 193nm resist
Author(s): Toshiaki Fukuhara; Taku Hirayama; Yuji Shibasaki; Shinji Ando; Mitsuru Ueda; Masayuki Endo; Masaru Sasago
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A new ArF matrix based on poly(vinylsulfonamide) has been developed. Sulfonamides, whose pKa values are comparable to those of phenols, can be used as acidic functional groups in the design of chemically amplified resist (CAR) and aqueous base developable resist. Various poly(N-alkyl vinylsulfonamide)s were prepared (R=H, CH2CF3, Pr, 1-adanmantyl), and showed high transparency at round 193 nm region. Depending on the substituents, the dissolution rates of films in a 2.38 wt% aqueous tetraethylammonium hydroxide solution were varied from 500 to 0.0035 nm/s. The tetrahydropyranyl (THP) protected poly(vinylsulfonamide) was prepared and the deprotection of THP was easily occurred when the photoresist containing a photoacid generator was exposed to UV light, followed by post-exposure baking.

Paper Details

Date Published: 4 May 2005
PDF: 9 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.598342
Show Author Affiliations
Toshiaki Fukuhara, Tokyo Institute of Technology (Japan)
Taku Hirayama, Tokyo Institute of Technology (Japan)
Yuji Shibasaki, Tokyo Institute of Technology (Japan)
Shinji Ando, Tokyo Institute of Technology (Japan)
Mitsuru Ueda, Tokyo Institute of Technology (Japan)
Masayuki Endo, Matsushita Electric Industrial Co., Ltd. (Japan)
Masaru Sasago, Matsushita Electric Industrial Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

© SPIE. Terms of Use
Back to Top