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Proceedings Paper

Plasma deposition of high-quality silicon dioxide
Author(s): Tie-Han Wang
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Paper Abstract

This paper presents a new deposition system in PECVD. The reaction principle is described and the experimental results show the properties of deposition film are nearly those produced by thermal-grown SiO2. We had success using a passivation layer and diffusion barrier in the semiconductor device manufacturing process.

Paper Details

Date Published: 1 June 1992
PDF: 6 pages
Proc. SPIE 1673, Integrated Circuit Metrology, Inspection, and Process Control VI, (1 June 1992); doi: 10.1117/12.59822
Show Author Affiliations
Tie-Han Wang, Ya Guang Electronic Engineering Factory (China)

Published in SPIE Proceedings Vol. 1673:
Integrated Circuit Metrology, Inspection, and Process Control VI
Michael T. Postek, Editor(s)

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