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Proceedings Paper

Advanced in-line process control of defects
Author(s): M. Michael Slama; Marylyn Hoy Bennett; Peter W. Fletcher
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Paper Abstract

A variety of techniques are currently in use for process monitoring and control of wafer quality during production. In general these techniques fall into two categories: (1) particle monitors that provide fast, simple results but are limited in visibility to many defects, and (2) more advanced systems that monitor a much larger class of potential problems but require significant analysis time and interpretation of results. The first category has traditionally been used for in-line monitoring, while the second category has served primarily for engineering analysis and R&D applications. Recent technical developments, in particular the development of advanced systems based on optical pattern filtering, have begun to blur the distinction between in-line and engineering analysis tools. This paper establishes performance guidelines for in-line process monitoring tools, reviews the current techniques utilized against these guidelines, and discusses the potential applications of these methods to in-line process control. Systems based on these new techniques hold the promise of providing sophisticated analysis capability for in-line process control applications, by offering extremely high throughput (in the range of a few minutes per wafer) and high sensitivity (0.20 micrometers and better), combined with intelligent but fully automated analysis of the data to provide `single-number' reports on production wafers.

Paper Details

Date Published: 1 June 1992
PDF: 10 pages
Proc. SPIE 1673, Integrated Circuit Metrology, Inspection, and Process Control VI, (1 June 1992); doi: 10.1117/12.59808
Show Author Affiliations
M. Michael Slama, National Semiconductor Corp. (United States)
Marylyn Hoy Bennett, Texas Instruments Inc. (United States)
Peter W. Fletcher, Insystems (United States)

Published in SPIE Proceedings Vol. 1673:
Integrated Circuit Metrology, Inspection, and Process Control VI
Michael T. Postek, Editor(s)

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