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Proceedings Paper

Silicon nanowire active integrated optics
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Paper Abstract

We employ ultranarrow silicon-on-insulator (SOI) waveguides to demonstrate significant Raman gain using low CW pump powers from a diode laser. Starting with measurements based on spontaneous Raman scattering in nanowire SOI waveguides, we obtain the parameters necessary to develop a useful numerical modeling tool for our system. This work shows clearly the feasibility of an SOI-based low-loss, low-power, on-chip Raman amplifier in the silicon nanowire system. We have also developed a rigorous coupled wave model to examine temporal effects in our Raman system.

Paper Details

Date Published: 25 March 2005
PDF: 8 pages
Proc. SPIE 5729, Optoelectronic Integrated Circuits VII, (25 March 2005); doi: 10.1117/12.598030
Show Author Affiliations
Richard M. Osgood, Columbia Univ. (United States)
Richard L. Espinola, Columbia Univ. (United States)
Jerry I. Dadap, Columbia Univ. (United States)
Sharee J. McNab, Thomas J. Watson Lab./IBM (United States)
Yuri A. Vlasov, Thomas J. Watson Lab./IBM (United States)

Published in SPIE Proceedings Vol. 5729:
Optoelectronic Integrated Circuits VII
Louay A. Eldada; El-Hang Lee, Editor(s)

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