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Proceedings Paper

Electrical resistance measurements for full-field lens characterization
Author(s): Elliott Sean Capsuto; Andrew Michael Lowen; Jim Dadashev; Joseph C. Pellegrini
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Paper Abstract

Lens performance parameters have been traditionally described using terms such as resolution, astigmatism, field curvature, proximity effects, and distortion. However, with decreasing geometries, decreasing exposure wavelengths and tighter bandwidths (such as 248 nm excimer laser lithography), lens characterization in terms of depth of focus (DOF) and exposure latitudes for the entire lens becomes more critical. The challenge is to define a focus and exposure setting that allows one to operate in the `common corridor.' `Common corridor' is defined as the resulting focus-exposure process window for the entire field of the lens encompassing all geometries of a specific line size. A modification to the MONO-LITH software package allows this calculation to be done quickly and easily.

Paper Details

Date Published: 1 June 1992
PDF: 12 pages
Proc. SPIE 1673, Integrated Circuit Metrology, Inspection, and Process Control VI, (1 June 1992); doi: 10.1117/12.59800
Show Author Affiliations
Elliott Sean Capsuto, SEMATECH (United States)
Andrew Michael Lowen, Shipley Co. Inc. (United States)
Jim Dadashev, Shipley Co. Inc. (United States)
Joseph C. Pellegrini, New Vision Systems, Inc. (United States)

Published in SPIE Proceedings Vol. 1673:
Integrated Circuit Metrology, Inspection, and Process Control VI
Michael T. Postek, Editor(s)

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