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Proceedings Paper

Direct phase measurements in phase-shift masks
Author(s): Amalkumar P. Ghosh; Derek B. Dove
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Paper Abstract

We have made direct phase shift measurements in phase shift masks using a transmission optical interferometer based upon a modification of an optical, laser scanning reflection profilometer. Measurements were carried out at 632.8 nm in transparent samples that consisted of thin films of SiO2 on fused silica substrates and thin films of SiO2 and Al2O3 on fused silica substrates. Measurements were also performed on attenuated phase shift mask blanks. The phase values measured at 632.8 nm were corrected for refractive index and wavelength for 248 nm.

Paper Details

Date Published: 1 June 1992
PDF: 13 pages
Proc. SPIE 1673, Integrated Circuit Metrology, Inspection, and Process Control VI, (1 June 1992); doi: 10.1117/12.59797
Show Author Affiliations
Amalkumar P. Ghosh, IBM/Thomas J. Watson Research Ctr. (United States)
Derek B. Dove, IBM/Thomas J. Watson Research Ctr. (United States)


Published in SPIE Proceedings Vol. 1673:
Integrated Circuit Metrology, Inspection, and Process Control VI
Michael T. Postek, Editor(s)

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