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Proceedings Paper

Single-level electric testsites for phase-shifting masks
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Paper Abstract

The phase shifting mask technology has quickly progressed from the exploratory phase to a serious development phase. This requires high resolution measurement techniques to quantify experimental results to optimize the designs. This paper describes a set of electrical linewidth measurement testsites which covers all five representative lithographic features in combination of dark-field and light-field patterns, positive and negative resists. The testsites can investigate binary intensity mask, attenuated, alternating, subresolution-assisted, rim, unattenuated, edge, and covered edge phase shifting masks. All testsites can be used with a single-level wafer exposure. There is no need to remove extra shorts or opens induced by uncovered phase shifters.

Paper Details

Date Published: 1 June 1992
PDF: 8 pages
Proc. SPIE 1673, Integrated Circuit Metrology, Inspection, and Process Control VI, (1 June 1992); doi: 10.1117/12.59795
Show Author Affiliations
Burn Jeng Lin, IBM/General Technology Div. (United States)
Donald J. Samuels, IBM/General Technology Div. (United States)
Chris A. Spence, IBM/General Technology Div. (United States)


Published in SPIE Proceedings Vol. 1673:
Integrated Circuit Metrology, Inspection, and Process Control VI
Michael T. Postek, Editor(s)

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