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Proceedings Paper

Metrology on phase-shift masks
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Paper Abstract

In the evaluation of new manufacturing processes, metrology is a key function, beginning with the first step of process development through the final step of everyday mass production at the fabrication floor level. RIM-type phase shift masks are expected to be the first application of phase shift masks in high volume production, since they provide improved lithography process capability at the expense of only moderate complexity in their manufacturing. Measurements of critical dimension (CD) and pattern position (overlay) on experimental rim-type and chromeless phase shift masks are reported. Pattern placement (registration) was measured using the Leitz LMS 2000. The overall design and important components were already described. The pattern placement of the RIM type phase shift structures on the photomask described above was determined within a tolerance of 25 nm (3s); nominal accuracy was within 45 nm (3s). On the chromeless phase shift mask the measurement results were easily obtained using a wafer intensity algorithm available with the system. The measurement uncertainties were less than 25 nm and 50 nm for precision and nominal accuracy respectively. The measurement results from the Leitz CD 200 using transmitted light were: a CD- distribution of 135 nm (3s) on a typical 6 micrometers structure all over the mask; the 0.9 micrometers RIM structure had a distribution of 43 nm (3s). Typical long term precision performance values for the CD 200 on both chrome and phase shift structures have been less than 15 nm.

Paper Details

Date Published: 1 June 1992
PDF: 7 pages
Proc. SPIE 1673, Integrated Circuit Metrology, Inspection, and Process Control VI, (1 June 1992); doi: 10.1117/12.59794
Show Author Affiliations
Klaus-Dieter Roeth, Leica LMW GmbH (Germany)
Wilhelm Maurer, Siemens AG (Germany)
Carola Blaesing-Bangert, Leica LMW GmbH (Germany)

Published in SPIE Proceedings Vol. 1673:
Integrated Circuit Metrology, Inspection, and Process Control VI
Michael T. Postek, Editor(s)

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