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Proceedings Paper

Fabrication of ultrahigh-quality vertical structures in GaAs
Author(s): Mats Hagberg; Bjorn Jonsson; Anders G. Larsson
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Paper Abstract

Extremely high quality vertical structures, suitable for integrated optical components, have been fabricated in GaAs using electron beam lithography and chemically assisted ion beam etching. By using the directly exposed electron beam resist as etch-mask, all quality degrading intermediate pattern transfers were eliminated, resulting in high resolution and reproducibility. In order to obtain a vertical mask profile and high durability, pattern-corrected exposure and heat treatment of the electron beam resist was employed. The pattern correction of the resist exposure was studied using an exposure simulation program. The surface roughness of the etched facets was estimated from several SEM micrographs to be less than 20 nm.

Paper Details

Date Published: 1 June 1992
PDF: 10 pages
Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); doi: 10.1117/12.59777
Show Author Affiliations
Mats Hagberg, Chalmers Univ. of Technology (Sweden)
Bjorn Jonsson, Chalmers Univ. of Technology (Sweden)
Anders G. Larsson, Chalmers Univ. of Technology (Sweden)


Published in SPIE Proceedings Vol. 1672:
Advances in Resist Technology and Processing IX
Anthony E. Novembre, Editor(s)

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